BSM101AR データシートの表示（PDF） - Siemens AG

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BSM101AR

SIMOPAC® Module

Siemens AG 

BSM 101 AR

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified.

Parameter

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = 0.25 mA

Gate threshold voltage

VGS = VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 50 V, VGS = 0

Tj = 25 ˚C

Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0

Drain-source on-state resistance

VGS = 10 V, ID = 200 A

Dynamic Characteristics

Forward transconductance

VDS ≥ 2 × ID × RDS(on) , max. ID = 200 A

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Turn-on Time ton (ton = td (on) + tr)

VCC = 40 V, VGS = 10 V

ID = 200 A, RG = 3.3 Ω

Turn-off Time toff (toff = td (off) + tf)

VCC = 40 V, VGS = 10 V

ID = 200 A, RG = 3.3 Ω

Symbol

min.

V(BR)DSS

50

VGS(th)

2.1

I DSS

–

–

IGSS

–

R DS(on)

–

gfs

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

156

–

–

–

–

–

–

–

Values

Unit

typ.

max.

V

–

–

3.0

4.0

µA

50

250

300

1000

nA

10

100

mΩ

2.6

3.0

200

–

S

18

24

nF

9

12

3

4

280

–

ns

220

–

220

–

60

–

Semiconductor Group

18

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