HAD825SP データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HAD825SP Datasheet PDF : 2 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2001.05.01
Page No. : 1/2
HAD825SP
NPN EPITAXIAL PLANAR TRANSISTOR
Features
Darlington Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCES Collector to Emitter Voltage ..................................................................................... 55 V
VEBO Emitter to Base Voltage ........................................................................................... 12 V
IC Collector Current ...................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
Min.
BVCBO
80
BVCES
55
BVEBO
12
ICBO
-
IEBO
-
ICES
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(on)
-
*hFE1
10K
*hFE2
10K
fT
125
Cob
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.2
1.5
1.5
-
100K
-
8
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=100uA, IB=0
V
IE=10uA, IC=0
nA VCB=60V, IE=0
nA VEB=10V, IC=0
nA VCE=50V, IB=0
V
IC=10mA, IB=0.01mA
V
IC=100mA, IB=0.1mA
V
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
MHz VCE=5V, IC=10mA, f =100MHz
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HAD825SP
HSMC Product Specification
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