BAW76 データシートの表示（PDF） - General Semiconductor

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BAW76

Small-Signal Diodes

General Semiconductor 

BAW75 and BAW76

Small-Signal Diodes

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Forward Voltage

BAW75

BAW76

VF

at IF = 30mA

at IF = 100mA

—

—

—

—

1

1

V

Leakage Current

BAW75

BAW75

BAW76

IR

BAW76

VR = 25V

—

VR = 25V, Tj = 150°C

—

VR = 50V

—

VR = 50V, Tj = 150°C

—

—

100

nA

—

100

µA

—

100

nA

—

100

µA

BAW75

35

—

—

Reverse Breakdown Voltage

BAW76 V(BR)R

tested with 5µA pulses

75

—

—

V

Capacitance

BAW75

BAW76

Ctot

VF = VR = 0V

—

—

—

—

4

2

pF

Reverse Recovery Time

IF = 10mA, IR = 10mA

—

—

4

Irr = 1mA

trr

ns

IF = 10mA, IR = 1mA

—

—

2

VR = 6V, RL = 100Ω

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