BAS285 データシートの表示（PDF） - Vishay Semiconductors
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BAS285 Datasheet PDF : 4 Pages
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BAS285
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
200
180
VR = 30 V
160
140
RthJA = 540 kW
120
100
PR - Limit
at 100 % VR
80
60
PR - Limit
at 80 % VR
40
20
0
25
15822
50
75
100
125
150
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15825
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
1000
100
VR = VRRM
10
1
25
50
75
100
125
150
15823
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
100
10
Tj = 125 °C
Tj = 25 °C
1
0.1
0
0.5
1.0
1.5
15824
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 2.0, 02-Jun-17
2
Document Number: 85501
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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