A778 データシートの表示（PDF） - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
A778 Datasheet PDF : 8 Pages
| |||
2SA778(K), 2SA778A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA778(K)
–150
–150
–5
–50
200
150
–55 to +150
2SA778A(K) Unit
–180
V
–180
V
–5
V
–50
mA
200
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to base
breakdown voltage
V(BR)CBO
Collector to emitter
breakdown voltage
V(BR)CER
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter
saturation voltage
VBE(sat)
Collector output
Cob
capacitance
Gain bandwidth product fT
Turn on time
t on
Turn off time
t off
Storage time
t stg
2SA778(K)
Min Typ Max
–150 — —
–150 — —
— — –1.0
———
— — –1.0
30 100 —
— –0.3 –1.0
— –0.77 –1.0
— — 10
— 50 —
— 135 —
— 1.7 —
— — 1.0
2SA778A(K)
Min Typ Max Unit Test conditions
–180 — — V
IC = –50 µA, IE = 0
–180 — — V
— — — µA
— — –1.0 µA
— — –1.0 µA
40 100 200
— –0.3 –1.0 V
— –0.77 –1.0 V
— — 10 pF
IC = –50 µA,
RBE = 30 kΩ
VCB = –100 V, IE = 0
VCB = –150 V, IE = 0
VEB = –5 V, IC = 0
VCE = –3 V,
IE = –15 mA
IC = –15 mA,
IB = –1 mA
IC = –15 mA,
IB = –1 mA
VCB = –10 V, IE = 0,
f = 1 MHz
— 50 — MHz VCE = –3 V,
IC = –15 mA
— 135 — ns VCC = –10.3 V
— 1.7 — µs IC = 10 IB1 = –10
IB2 = –10 mA
— — 1.0 µs VCC = –10 V,
IC =–17 mA
IB1 = –1mA,
IB2 = –12 mA
2
Share Link: 