28F016S3 データシートの表示（PDF） - Intel
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28F016S3 Datasheet PDF : 41 Pages
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28F004S3/28F008S3/28F016S3
1.0 INTRODUCTION
This datasheet contains 4-, 8-, and 16-Mbit 3 Volt
FlashFile memory specifications. Section 1.0
provides a flash memory overview. Sections 2.0,
3.0, 4.0, and 5.0 describe the memory organization
and functionality. Section 6.0 covers electrical
specifications for commercial and extended
temperature product offerings. Ordering information
is provided in Section 7.0. Finally, the 3 Volt
FlashFile memory family documentation also
includes application notes and design tools which
are referenced in Section 8.0.
1.1 New Features
The 3 Volt FlashFile memory family maintains
backwards-compatibility with Intel® 28F008SA-L.
Key enhancements include:
• SmartVoltage Technology
• Enhanced Suspend Capabilities
• In-System Block Locking
They share a compatible status register, software
commands, and pinouts. These similarities enable
a clean upgrade from the 28F008SA-L to 3 Volt
FlashFile products. When upgrading, it is important
to note the following differences:
• Because of new feature and density options,
the devices have different device identifier
codes. This allows for software optimization.
• VPPLK has been lowered from 6.5 V to 1.5 V to
support low VPP voltages during block erase,
program, and lock-bit configuration operations.
Designs that switch VPP off during read
operations should transition VPP to GND.
• To take advantage of SmartVoltage tech-
nology, allow VPP connection to 3.3 V.
For more details see application note AP-625,
28F008SC Compatibility with 28F008SA (order
number 292180).
1.2 Product Overview
The 3 Volt FlashFile memory family provides
density upgrades with pinout compatibility for the
4- , 8-, and 16-Mbit densities. The 28F004S3,
28F008S3, and 28F016S3 are high-performance
memories arranged as 512 Kbyte, 1 Mbyte, and
2 Mbyte of eight bits. This data is grouped in eight,
sixteen, and thirty-two 64-Kbyte blocks which are
individually erasable, lockable, and unlockable in-
system. Figure 5 illustrates the memory
organization.
SmartVoltage technology enables fast factory
programming and low power designs. Specifically
designed for 3 V systems, 3 Volt FlashFile
components support read operations at 2.7 V and
3.3 V VCC and block erase and program operations
at 2.7 V, 3.3 V and 12 V VPP. The 12 V VPP option
renders the fastest program performance which will
increase your factory throughput. With the 2.7 V or
3.3 V VPP option, VCC and VPP can be tied together
for a simple, low-power 2.7 V or 3 V design. In
addition to the voltage flexibility, the dedicated VPP
pin gives complete data protection when VPP ≤
VPPLK.
Internal VPP detection circuitry automatically
configures the device for optimized block erase and
program operations.
A Command User Interface (CUI) serves as the
interface between the system processor and
internal operation of the device. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
64-Kbyte blocks typically within 1.1 second
(12 V VPP), independent of other blocks. Each block
can be independently erased 100,000 times
(1.6 million block erases per device). A block erase
suspend operation allows system software to
suspend block erase to read data from or program
data to any other block.
Data is programmed in byte increments typically
within 7.6 µs (12 V VPP). A program suspend
operation permits system software to read data or
execute code from any other flash memory array
location.
PRELIMINARY
5
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