Q67000-A9230 データシートの表示（PDF） - Infineon Technologies

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Q67000-A9230

SMPS-IC with MOSFET Driver Output

Infineon Technologies 

TDA 4916 GG

When the supply to the switch-mode power supply is switched on, the capacitive

displacement current from the gate of the SIPMOS transistor is conducted to the

smoothing capacitor at VS QSIP by the diode connected to VS QSIP. The voltage at

VS QSIP may reach about 2.3 V in the process without the SIPMOS transistor being

turned-ON.

The diode connected to ground clamps negative voltages at Q SIP to minus 0.7 V.

Capacitive currents which occur with voltage dips at the drain terminal of the SIPMOS

transistor can then flow away unimpeded.

The output is active Low with supply voltages at VS and VS QSIP from about 4 V on. The

function of the diode connected to VS QSIP and the resistor are then taken over by the

pull-down source.

The two ground terminals 0V SQIP and 0V GND can lie at different levels. This permits

connections to be made to the SIPMOS transistor in such a way that the drive currents

for the gate do not flow to the source via the current-sensing resistor. The maximum

permissible level differences between 0V GND and 0V SQIP are given under Functional

Range. If greater level differences are anticipated, it is better to join the two terminals.

Version 2.0

11

1 May 1996

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