MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Erec
tb/ta
VFP
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Forward recovery voltage
Thermal resistance
VRM = 4500V, Tj = 125°C
IFM = 1570A, Tj = 125°C
IFM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C
(Refer to Fig. 1 and Fig. 2)
di/dt = 1000A/µs, Tj = 25°C
Junction to fin
Limits
Unit
Min.
Typ.
Max.
—
—
80
mA
—
—
3.5
V
—
—
1500 µC
—
4.0
—
J/P
—
2
—
—
—
100
—
V
—
—
.027 °C/W
Fig. 1 (Definition of reverse recovery waveform)
QRR = (trr × IRM)/2
IFM
0
50%IFM
di/dt(0~50%IFM) (Note 1)
trr
ta
tb
IRM
50%IRM
90%IRM
Fig. 2 (Reverse recovery test circuit)
L(line)
VD = 2250V
L(load)
GCT
FD500JV
Rc
CDi
Cc : 6µF
Cc Rc = 2Ω
di/dt = VD/L(line) = 2250V/1.125µH = 2000A (Note 1)
Note 1
In case of 2000A/µs, definition of di/dt is by VD and inductance value of L (line) as follows.
di/dt = VD/L (line) = 2250V/1.125µH = 2000A/µs
Feb.1999