CXG1121TN データシートの表示（PDF） - Sony Semiconductor
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CXG1121TN Datasheet PDF : 7 Pages
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CXG1121TN
Electrical characteristics
(Ta = 25°C)
Item
Insertion loss
Isolation
Symbol
IL
ISO
Port
Tx2 – ANT
Tx1 – ANT
ANT – Rx1
ANT – Rx2
ANT – Tx1
ANT – Tx2
Tx2 – Rx1, Rx2
Tx1 – Rx1, Rx2
Condition
∗1
∗2
∗3
∗4
∗3
∗4
∗1
∗2
Min. Typ. Max. Unit
0.5 0.7 dB
0.6 0.8 dB
0.55 0.75 dB
0.7 0.9 dB
20
dB
17
dB
20
dB
20
dB
VSWR
Harmonics∗
P1dB compression input
power
VSWR
2fo
3fo
2fo
3fo
P1dB
∗1
GSM Tx – ANT ∗1
∗2
DCS Tx – ANT ∗2
GSM Tx – ANT ∗1
DCS Tx – ANT ∗2
1.2
–40 –36 dBm
–34 –30 dBm
–40 –36 dBm
–34 –30 dBm
36
dBm
36
dBm
Control current
ICTL
Supply current
IDD
Leakage current
IIK
VCTL = 3V
STBY = H
STBY = L
80 120 µA
0.5 1.0 mA
90
µA
Electrical characteristics are measured with all RF ports terminated in 50Ω.
∗ Harmonics measured with Tx inputs harmonically matched. The use of harmonic matching is recommended
to ensure optimum performance.
∗1 Power incident on GSM Tx, Pin = 34dBm, 880 to 915MHz, VDD = 5.0V, GSM Tx enabled
∗2 Power incident on DCS Tx, Pin = 32dBm, 1710 to 1785MHz, VDD = 5.0V, DCS Tx enabled
∗3 Power incident on ANT, Pin = 10dBm, 925 to 960MHz, VDD = 5.0V, GSM Rx enabled
∗4 Power incident on ANT, Pin = 10dBm, 1805 to 1880MHz, VDD = 5.0V, DCS Rx enabled
Supply Voltage Value (VDD)
Mode
GSM/DCS Tx
GSM/DCS Rx
Min. Typ. Max. Unit
4.5
5
5.7
V
2.7
3
4
V
CMOS Logic Value
Logic
High
Low
Min. Typ. Max. Unit
2.4
2.8
3.2
V
0
0.4
V
–3–
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