DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TEF3718SSP(2003) データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
TEF3718SSP
(Rev.:2003)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TEF3718SSP Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TEF3718-TEF3718S
ELECTRICAL CHARACTERISTICS
VCC = 5 V ± 5 %. VMM = – 10 V to + 45 V. Tamb = – 40 C to + 25 °C (Unless otherwise specified)
Symbol
ICC
VIH
VIL
IIH
IIL
VCH
VCM
VCL
ICO
Ioff
Vsat
Ptot
toff
td
Vsat
Iref
Vsat
Characteristics
Supply Current
High Level Input Voltage Logic Input
Low Level Input Voltage Input
High Level Input Current Logic Input (VI = 2.4 v)
Low Level Input Current Logic Input (VI = 0.4 v)
Comparator Treshold Voltage (VR = + 5 V)
IO = 0 I1 = 0
IO = 1 I1 = 0
IO = 0 I1 = 1
Comparator Input Current
Output Leakage Current (IO 1, I1 = 1)
Total Saturation Voltage Drop (Im = 1 A,)
POWERDIP
MULTIWATT
Total Power Dissipation (Im = 1 A, fs = 30 kHz)
Cutt off Time (see figures 1 and 2 Vmm = +10 V, Vton 5 µs)
Turn off Delay (see figures 1 and 2, Tamb = + 25 °C
dVC/dt 50 mV/µs
Alarm Output Saturation Voltage IO = 2 mA
Reference Input Current, VR = 5 V
Source Diode Transistor Pair
Im = 0.5 A
MULTIWATT Im = 1 A
Min.
2
0.4
390
230
65
— 20
25
Typ.
420
250
80
3.1
30
1.6
0.8
0.4
Max.
25
0.7
20
440
270
90
20
100
2.9
3.3
3.6
35
1
1.35
1.75
Unit
mA
V
V
µA
µA
mV
µA
µA
V
W
µs
µs
V
mA
mA
Saturation Voltage
Im = 0.5 A
1.25
Im = 1 A
1.55
Vf
POWERDIP
Diode Forward Voltage
If = 0.5 A
1.5
If = 1 A
1.7
Isub Substrate Leakage Current
Sink Diode Transistor Pair
If = 1 A
Im = 0.5 A
MULTIWATT Im = 1 A
10
1.35 mA
1.55
Vsat Saturation Voltage
Vf Diode Forward Voltage
Im = 0.5 A
Im = 1 A
POWERDIP
If = 0.5 A
If = 1 A
1.25
1.35
1.5
1.8
4/8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]