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TEF3718 データシートの表示(PDF) - STMicroelectronics

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TEF3718
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TEF3718 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TEF3718-TEF3718S
ELECTRICAL CHARACTERISTICS
VCC = 5 V ± 5 %. VMM = – 10 V to + 45 V. Tamb = – 40 C to + 25 °C (Unless otherwise specified)
Symbol
Characteristics
ICC Supply Current
VIH High Level Input Voltage Logic Input
VIL Low Level Input Voltage Input
IIH High Level Input Current Logic Input (VI = 2.4 v)
IIL Low Level Input Current Logic Input (VI = 0.4 v)
VCH Comparator Treshold Voltage (VR = + 5 V)
VCM
VCL
IO = 0 I1 = 0
IO = 1 I1 = 0
IO = 0 I1 = 1
ICO Comparator Input Current
Ioff Output Leakage Current (IO 1, I1 = 1)
Vsat Total Saturation Voltage Drop (Im = 1 A,)
POWERDIP
MULTIWATT
Ptot Total Power Dissipation (Im = 1 A, fs = 30 kHz)
toff Cutt off Time (see figures 1 and 2 Vmm = +10 V, Vton 5 µs)
td Turn off Delay (see figures 1 and 2, Tamb = + 25 °C
dVC/dt 50 mV/µs
Vsat Alarm Output Saturation Voltage IO = 2 mA
Iref Reference Input Current, VR = 5 V
Vsat Source Diode Transistor Pair
Im = 0.5 A
MULTIWATT Im = 1 A
Min.
2
0.4
390
230
65
— 20
25
Typ.
420
250
80
3.1
30
1.6
0.8
0.4
Max.
25
0.7
20
440
270
90
20
100
2.9
3.3
3.6
35
1
1.35
1.75
Unit
mA
V
V
µA
µA
mV
µA
µA
V
W
µs
µs
V
mA
mA
Saturation Voltage
Im = 0.5 A
1.25
Im = 1 A
1.55
Vf
POWERDIP
Diode Forward Voltage
If = 0.5 A
1.5
If = 1 A
1.7
Isub Substrate Leakage Current
Sink Diode Transistor Pair
If = 1 A
Im = 0.5 A
MULTIWATT Im = 1 A
10
1.35 mA
1.55
Vsat Saturation Voltage
Vf Diode Forward Voltage
Im = 0.5 A
Im = 1 A
POWERDIP
If = 0.5 A
If = 1 A
1.25
1.35
1.5
1.8
4/8

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