UPC2712T-E3 データシートの表示（PDF） - NEC => Renesas Technology

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UPC2712T-E3

2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

NEC => Renesas Technology 

2.5 GHz SILICON MMIC UPC2709T

WIDE-BAND AMPLIFIER UPC2712T

FEATURES

• WIDE FREQUENCY RESPONSE: 2.5 GHz

• HIGH GAIN: 23 dB (UPC2709T)

• SATURATED OUTPUT POWER:

+11.5 dBm (UPC2709T)

• INTERNAL CURRENT REGULATION MINIMIZES GAIN

CHANGE OVER TEMPERATURE

• 5 V SINGLE SUPPLY VOLTAGE

• SUPER SMALL PACKAGE

• TAPE AND REEL PACKAGING OPTION AVAILABLE

DESCRIPTION

The UPC2709T and UPC2712T are Silicon Monolithic inte-

grated circuits manufactured using the NESAT III process.

These devices are suitable as buffer amplifiers for wide-band

applications. They are designed for low cost gain stages in

cellular radios, GPS receivers, DBS tuners, PCN, and test/

measurement equipment.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

GAIN vs. FREQUENCY

30

25

20

UPC2712

15

UPC2709

10

0

0.5 1.0 1.5 2.0

2.5 3.0

Frequency, f (GHz)

ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 1 GHz, VCC = 5 V)

SYMBOLS

PART NUMBER

PACKAGE OUTLINE

PARAMETERS AND CONDITIONS

UNITS

ICC

GS

fU

∆GS

PSAT

P1dB

NF

RLIN

Circuit Current (no signal)

Small Signal Gain

Upper Limit Operating Frequency

(The gain at fU is 3 dB down from the gain at 0.1 GHz)

Gain Flatness, f = 0.1 ~ 1.8 GHz

f = 0.1 ~ 2.0 GHz

Saturated Output Power

Output Power at 1 dB Compression Point

Noise Figure

Input Return Loss

mA

dB

GHz

dB

dBm

dBm

dB

dB

RLOUT

ISOL

∆GT

RTH

Output Return Loss

Isolation

Gain -Temperature Coefficient

Thermal Resistance (Junction to Ambient)

dB

dB

dB/°C

°C/W

UPC2709T

T06

MIN

TYP MAX

19

25

32

21

23

26.5

2.0

2.3

±1.0

9

11.5

7.5

5

6.5

7

10

7

10

26

31

-0.002

200

UPC2712T

T06

MIN TYP MAX

9

12

15

18

20

23.5

2.2 2.6

±0.8

0

3

-2.5

4.5

6

9

12

10

13

28

33

-0.003

200

California Eastern Laboratories

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