STH51005A データシートの表示（PDF） - Infineon Technologies

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STH51005A

High Power 1300 nm FP Laser

Infineon Technologies 

Technical Data

STH51004x

STH51005x

Technical Data

Absolute Maximum Ratings

Parameter

Symbol

Limit Values Unit

min.

max.

Module

Operating temperature range at case

TC

–40

85

°C

Storage temperature range

Tstg

–40

85

Soldering temperature (tmax = 10 s,

TS

260

2 mm distance from bottom edge of case)

Laser Diode

Direct forward current

Radiant power CW

Reverse Voltage

Monitor Diode

IF max

PF, rad

VR

120

mA

4

mW

2

V

Reverse Voltage

Forward Current

VR

10

V

IF

2

mA

The electro-optical characteristics described in the following tables are only valid for use

within the specified maximum ratings or under the recommended operating conditions.

Transmitter Electro-Optical Characteristics

Parameter

Symbol

min.

Optical output power

(maximum)

PF, max

2

Emission wavelength center of

range, PF = 0.5 PF, max.

Spectral width (RMS)

Temperature coefficient of

wavelength

λtrans

σλ

TC

1280

Threshold current

Ith

2

(whole temperature range)

Forward voltage, PF = 0.5 PF, max. VF

Radiant power at Ith

Pth

Limit Values

typ.

max.

1330

5

0.5

45

1.5

80

Unit

mW

nm

nm/K

mA

V

µW

Data Sheet

5

2001-06-01

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