GM76C8128CLL-55 データシートの表示（PDF） - LG
部品番号
コンポーネント説明
メーカー
GM76C8128CLL-55 Datasheet PDF : 11 Pages
| |||
LG Semicon Co.,Ltd.
GM76C8128CL/CLL
131,072 WORDS x 8 BIT
CMOS STATIC RAM
Description
The GM76C8128CL/CLL is a 1,048,576 bits static
random access memory organized as 131,072 words
by 8 bits. Using a 0.6um advanced CMOS technology
and it provides high speed operation with minimum
cycle time of 55/70/85ns. The device is placed in a
low power standby mode with /CS1 high or CS2 low
and the output enable (/OE) allows fast memory
access. Thus it is suitable for high speed and low
power applications, especially where battery back-up
is required.
Features
* Fast Speed : 55/70/85ns
* Low Power Standby and Low Power Operation
Standby : 0.275mW Max. at TA = - 40 ~ 85C(LLE/LLI)
0.55mW Max. at TA = - 40 ~ 85C(LE/LI)
0.11mW Max. at TA = 0 ~ 70C(LL)
0.55mW Max. at TA = 0 ~ 70C(L)
Operation : 385mW (Max)
* Completely Static RAM : No Clock or Timing
Strobe Required
* Equal Access and Cycle Time
* TTL compatible inputs and outputs
* Capability of Battery Back-up Operation
* Single + 5V+/-10% Operation
* Standard 32 DIP, SOP and TSOP-I,STSOP-I
* Temperature Range
A0
Commercial(0¡-70C) : GM76C8128C
A1
Extended (-25 ~ 85C) : GM76C8128C-E
A2
Industrial (-40 ~ 85C) : GM76C8128C-I
Pin Description
Pin Configuration
NC 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
VSS 16
32 VCC
31 A15
30 CS2
29 /WE
28 A13
27 A8
26 A9
25 A11
24 /OE
23 A10
22 /CS1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
(Top View)
Block Diagram
10
X
1024 MEMORY CELL ARRAY
1024 x 128 x 8
Decoder
(128K x 8)
Address
Buffer
Pin
A0-A16
/WE
Function
Address Inputs
Write Enable Input
A14
128 x 8
A15
7
128
A16
Y
Decorder
Column Select
/CS1, CS2
/OE
I/O0-I/O7
VCC
VSS
Chip Select Input
Output Enable Input
Data Inputs/Outputs
Power Supply (4.5V ~5.5V)
Ground
/CS1
CS2
/CS1, CS2
Chip
Control
/OE /OE, /WE
Chip
/WE Control
8
I/O Buffer
NC
No Connection
85
Share Link: 