HGT1S2N120CN データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
HGT1S2N120CN Datasheet PDF : 9 Pages
| |||
Electrical Characteristics TC = 25°C unless otherwise noted (Continued)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
td(ON)l
trl
td(OFF)l
tfl
EON1
EON2
EOFF
td(ON)l
trl
td(OFF)l
tfl
EON1
EON2
EOFF
RθJC
Current Trun-On Delay Time
Current Rise Time
Curent Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Curent Turn-On Delay Time
Current Rise Time
Curent Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction to Case
IGBT and Diode at TJ = 25°C
ICE = 2.6A
VCE = 960V
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
IGBT and Diode at TJ = 150°C
ICE = 2.6A
VCE = 960V
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
-
25
30
ns
-
11
15
ns
-
205 220
ns
-
260 320
ns
-
96
-
µJ
-
425 590
µJ
-
355 390
µJ
-
21
25
ns
-
11
15
ns
-
225 240
ns
-
360 420
ns
-
96
-
µJ
-
800 1100
µJ
-
530 580
µJ
-
-
1.20 °C/W
Notes:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical
diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector
current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method
produces the true total Turn-Off Energy Loss.
3
HGTP2N120CN, HGT1S2N120CN Rev. C
www.fairchildsemi.com
Share Link: 