HGT1S2N120CN データシートの表示（PDF） - Fairchild Semiconductor

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HGT1S2N120CN

13A, 1200V, NPT Series N-Channel IGBT

Fairchild Semiconductor 

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insu-

lation damage by the electrostatic discharge of energy through

the devices. When handling these devices, care should be exer-

cised to assure that the static charge built in the handler’s body

capacitance is not discharged through the device. With proper

handling and application procedures, however, IGBTs are cur-

rently being extensively used in production by numerous equip-

ment manufacturers in military, industrial and consumer

applications, with virtually no damage problems due to electro-

static discharge. IGBTs can be handled safely if the following

basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting springs

or by the insertion into conductive material such as

“ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers, the

hand being used should be grounded by any suitable means

- for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from cir-

cuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage rating

of VGEM. Exceeding the rated VGE can result in permanent

damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essen-

tially capacitors. Circuits that leave the gate open-circuited or

floating should be avoided. These conditions can result in

turn-on of the device due to voltage buildup on the input

capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate protection

is required, an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device (Figure 3)

is presented as a guide for estimating device performance for a

specific application. Other typical frequency vs collector current

(ICE) plots are possible using the information shown for a typical

unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot

(Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is

smaller at each point. The information is based on measure-

ments of a typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime

(the denominator) has been arbitrarily held to 10% of the on-

state time for a 50% duty factor. Other definitions are possible.

td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off

delay can establish an additional frequency limiting condition for

an application other than TJM. td(OFF)I is important when control-

ling output ripple under a lightly loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable

dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of

device switching and conduction losses must not exceed PD.

A 50% duty factor was used (Figure 3) and the conduction

losses (PC) are approximated by PC = (VCE x ICE)/2.

EON2 and EOFF are defined in the switching waveforms shown

in Figure 19. EON2 is the integral of the instantaneous power

loss (ICE x VCE) during turn-on and EOFF is the integral of the

instantaneous power loss (ICE x VCE) during turn-off. All tail

losses are included in the calculation for EOFF; i.e., the collec-

tor current equals zero (ICE = 0).

8

HGTP2N120CN, HGT1S2N120CN Rev. C

www.fairchildsemi.com

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