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BUT34 データシートの表示(PDF) - Motorola => Freescale

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BUT34 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUT34
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
20
1
5V
0
2
PW Varied to Attain
IC = 100 mA
220
PULSES
δ = 3%
680 pF
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7
Vclamp = VCEO(sus)
Lcoil = 180 µH
Rcoil = 0.05
VCC = 10 V
INDUCTIVE TEST CIRCUIT
TUT
1
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
2
1N4937
OR
EQUIVALENT
Vclamp
RS =
0.1
Rcoil
Lcoil
VCC
33
D1
2 W 160
100
MM3735
22 µF
D3
2N6438
+10 V
MR854
680 pF
22
Ib1 ADJUST
D1 D2 D3 D4 1N4934
680 pF
1 µF
Ib2 ADJUST
22
dTb ADJUST
2N3763
100
D4
dT
MR854
160
33
2W
D3
22 µF 2N6339
VCC
OUTPUT WAVEFORMS
IC
ICM
tf Clamped
t
t1
tf
VCE VCEM
TIME
Vclamp
t
t2
t1 Adjusted to
Obtain IC
[ Lcoil (ICM)
t1
VCC
[ Lcoil (ICM)
t2
Vclamp
Test Equipment
Scope — Tektronix
475 or Equivalent
TEST CIRCUIT
for
FREE–WHEEL
DIODE
+
DRIVER
VD
ID
AV
up to
50 V
CRONETICS
PG130
510
VD
up to
50 V 5 µs
1%
ID
15
10
TC = 25°C
IC/IB = 5
5
3
2
1
0.5
0.3 IC = 50 A
0.2
IC = 25 A
0.1
1 2 3 4 5 6 7 8 9 10
Ib2/Ib1
Figure 6. Fall Time versus IB2/IB1
10
8
6
IC = 25 A
5
4
3
IC = 50 A
2
TC = 25°C
VBE(off) = 5 V
1
1 2 3 4 5 6 7 8 9 10
βf, FORCED GAIN
Figure 8. Storage Time versus Forced Gain
5
4
3
IC = 16 A
σ tF = 200 ns
σ tS = 400 ns
2
1
tS
VBE(off) = 5 V
10 V
0.5
VBE(off) = 5 V
0.3
0.2
10 V IC/IB = 10
0.1
tF
TC = 25°C
IC/IB = 20
1
23
5 7 10
20 30 50
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Turn–Off Time versus IC
10
8
6
5
4
IC = 25 A
3
2 IC = 50 A
TC = 25°C
IC/IB = 5
1
1 2 3 4 5 6 7 8 9 10
Ib2/Ib1
Figure 9. Storage Time versus Ib2/Ib1
4
Motorola Bipolar Power Transistor Device Data

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