BUT34 データシートの表示（PDF） - Motorola => Freescale
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BUT34 Datasheet PDF : 8 Pages
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BUT34
The Safe Operating Area figures shown in Figures 16 and 17 are
specifed for these devices under the test conditions shown.
60
10 µs
30
DC
100 µs
1 ms
10
3.0
1.0
0.5
0.3 TC = 25°C
0.1
1
5
10
30
100
300 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Safe Operating Area
60
40
20
TC = 25°C
IC/IB = 10
VBE(off) = 5 V
0
0
200 400 600
850
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 17. Reverse Bias Safe Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subject to greater dissipation
than the curves indicate.
The data of Figure 16 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
y limits are valid for duty cycles to 10% but must be derated
when TC 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 16 may be found at any case tem-
perature by using the appropriate curve on Figure 18.
TJ(pk) may be calculated from the data in Figure 5. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 17 gives the RBSOA character-
istics.
100
80
60
40
20
0
0
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
40
80
120
160
200
IC, CASE TEMPERATURE (°C)
Figure 18. Power Derating
6
Motorola Bipolar Power Transistor Device Data
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