HMC224MS8 データシートの表示（PDF） - Hittite Microwave

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HMC224MS8

GaAs MMIC T/R SWITCH 5 - 6 GHz

Hittite Microwave 

11

HMC224MS8 / 224MS8E

v02.0805

UED Outline Drawing

GaAs MMIC T/R SWITCH

5 - 6 GHz

DISCPORONTDIUNCT Not

Recommended

NOTES:

for

New

Designs

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC224MS8

Low Stress Injection Molded Plastic

Lead Finish

Sn/Pb Solder

HMC224MS8E RoHS-compliant Low Stress Injection Molded Plastic

[1] Max peak reflow temperature of 235 °C

[2] Max peak reflow temperature of 260 °C

[3] 4-Digit lot number XXXX

100% matte Sn

Typical Application Circuit

MSL Rating

MSL1 [1]

MSL1 [2]

Package Marking [3]

H224

XXXX

H224

XXXX

Notes:

1. Control Inputs A and B can be driven directly with

CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS

logic gates and to pin 4 of the RF switch.

2. Set V to 5 Volts and use HCT series logic to provide a

TTL driver interface.

3. Highest RF signal power capability is achieved with V set

to +10V. However, the switch will operate properly (but at

lower RF power capability) at bias voltages down to +3V.

4. RF ByPass: Do not use RF bypass capacitors on Vdd, A

or B ports. Resistors R1, R2, R3 = 100 Ohms should be

placed close to the Vdd, A and B ports. Use resistor size

0402 to minimize parasitic inductances and capacitances.

5. DC Blocking capacitors are not required for each RF port.

6. Evaluation PCB available.

11 - 4

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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