MMSF7N03ZR2 データシートの表示（PDF） - Motorola => Freescale

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MMSF7N03ZR2

TMOS Single N-channel with Monolithic Zener ESD Protected Gate

Motorola => Freescale 

MMSF7N03Z

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0)

(1) (3)

V(BR)DSS

30

—

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

IGSS

—

Gate Threshold Voltage

(Cpk ≥ 2.0)

(1) (3)

VGS(th)

(VDS = VGS, ID = 250 µAdc)

1.0

Threshold Temperature Coefficient (Negative)

—

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 7.5 Adc)

(VGS = 4.5 Vdc, ID = 3.8 Adc)

(Cpk ≥ 2.0)

(1) (3)

RDS(on)

—

—

Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc)

(1)

gFS

4.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

td(on)

—

Rise Time

Turn–Off Delay Time

(VDS = 15 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

tr

—

td(off)

—

Fall Time

tf

—

Turn–On Delay Time

td(on)

—

Rise Time

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 5.0 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

tr

—

td(off)

—

Fall Time

tf

—

Gate Charge

QT

—

(VDS = 24 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc) (1)

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 7.5 Adc, VGS = 0 Vdc) (1)

(IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

(IS = 7.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

trr

—

ta

—

tb

—

Reverse Recovery Storage Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

Typ

Max

Unit

Vdc

—

—

35

—

mV/°C

µAdc

0.03

2.0

0.15

10

1.3

5.0

µAdc

Vdc

2.0

3.0

5.5

—

mV/°C

mΩ

22

30

30

40

9.5

—

Mhos

750

1500

pF

340

680

45

90

40

80

ns

90

180

470

940

170

340

120

240

ns

350

700

430

860

140

280

34

48

nC

3.5

—

9.5

—

6.5

—

Vdc

0.83

1.6

0.67

—

110

—

ns

22

—

90

—

0.17

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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