FC21 データシートの表示（PDF） - SANYO -> Panasonic
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FC21 Datasheet PDF : 5 Pages
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FC21
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=--10µA, VDS=0
VGS=--20V, VDS=0
VDS=10V, ID=100µA
VDS=10V, VGS=0
VDS=10V, VGS=0, f=1kHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
Ratings
min
typ
--40
--2.0
--3.0
40*
22
30
11
2.5
1.5
135
100
3
0.1
0.8
55
50
6
* : The FC21 is classified by IDSS as follows : (unit : mA)
Rank
J
K
L
IDSS
40 to 52
48 to 63
57 to 75
The specifications shown above are for each individual FET or transistor.
Electrical Connection
B
E/D
S
max
--1.0
--5.0
75*
0.1
0.1
600
0.5
1.0
Unit
V
nA
V
mA
mS
pF
pF
dB
µA
µA
MHz
pF
V
V
V
V
V
ID -- VDS
[FET]
80
60
VGS=0
--0.5V
40
--1.0V
20
--1.5V
--2.0V
--3.0V --2.5V
0
0
1
2
3
4
5
Drain-to-Source Voltage, VDS -- V ITR01960
ID -- VGS
[FET]
100
VDS=10V
80
60
40
20
0
--6
--5
--4
--3
--2
--1
0
Gate-to-Source Voltage, VGS -- V ITR01963
C
G
ID -- VDS
[FET]
80
60
VGS=0
--0.5V
40
--1.0V
20
--1.5V
--2.0V
--3.0V --2.5V
0
0
4
8
12
16
20
Drain-to-Source Voltage, VDS -- V ITR01961
ID -- VGS
[FET]
100
VDS=10V
IDSS=60mA
80
60
40
75°C
20
0
--6
--5
--4
--3
--2
--1
0
Gate-to-Source Voltage, VGS -- V ITR01964
No.7021-2/5
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