M64884FP データシートの表示（PDF） - MITSUBISHI ELECTRIC
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M64884FP
MITSUBISHI ELECTRIC
M64884FP Datasheet PDF : 13 Pages
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MITSUBISHI ICs (Cordless Telephone)
M64884FP
Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer
13-2. ELECTRICAL CHARACTERISTICS (Ta= -30oC to +85oC, unless otherwise noted)
Sy m bol Block
Parameter
Application
pin
Test Condition
Limits
Unit
Min. Ty p. Max.
VIH
"H" input v oltage SI, RST, CPS Vcc=2.7~3.6V
-0.3
3.6 V
VIL
"L" input v oltage SI, RST, CPS Vcc=2.7~3.6V
-0.2
0.3 V
Vcc=3.6V,
IIH
"H" input current SI, RST, CPS
VIH=3.6V
2
µA
IIL
Vcc=3.6V,
"L" input current SI, RST, CPS
-2
µA
VIL=0V
VOL
"L" output v oltage
LOCK
Vcc=3.0V,
Io=1.0mA
0.2 V
PLL
ICPO
CP output current
(Source & Sink
current)
Vcc=3.0V,
Ta=25oC ,
(1) 70
100 130
VPD=1.5V
(2) 210 300 390
PD1, PD2
Data
DE
DF
DG
DH
µA
(1)
L
L (3) 350
500 650
(2)
L
H
(3)
H
(4)
H
L
(4) 490
H
700
910
ICPLK
Vcc=3.6V,VPD=1.8V,
CP output leak current PD1, PD2
Vo=HiZ(OFF)
-100
100 nA
ILDLK
LOCK output
leak current
LOCK Vcc=3.6V, VOH=3.6V
5
µA
IBIAS1
OSC bias current
Vcc=3.0V, Ta=25oC,
XIN
35
50
65 µA
VIH=3.0V
IBIAS2
OSC bias current
XOU T
Vcc=3.0V, Ta=25oC,
VIH=3.0V
175 250 325 µA
IBIAS3
OSC bias current
XBO
Vcc=3.0V, Ta=25oC,
VIH=3.0V
175 250 325 µA
VBIAS1
VBIAS2 OSC
OSC bias v oltage
OSC bias v oltage
XIN
XOU T
Vcc=3.0V, IIF=0µA
Vcc=3.0V, IIF=0µA
2.8
V
2.0
V
VBIAS3
OSC bias v oltage
XBO
Vcc=3.0V, IIF=0µA
2.0
V
VSW
Buf f er output
amplitude
Vcc=3.0V, Ta=25oC,
FOSC=4~25MHz,
XBO
0.2
VXIN=0.4~1.0Vpp,
at XBO non load
1.0 Vpp
Vcc=3.0V, Ta=25oC
NR
Negativ e Resister
XIN
100
ohm
(Shown in Page 5)
Ver 1.0
Nov 25,1998
MITSUBISHI
ELECTRIC
10
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