BT151D(2008) データシートの表示（PDF） - STMicroelectronics
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BT151D Datasheet PDF : 10 Pages
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THBT15011, THBT20011, THBT27011
Table 2. Thermal resistance
Symbol
Rth(j-a)
Junction to ambient
Parameter
Table 3.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VRM Stand-off voltage
IRM Leakage current at stand-off voltage
VR Continuous reverse voltage
VBR Breakdown voltage
VBO Breakover voltage
IH Holding current
IBO Breakover current
VF Forward voltage drop
IPP Peak pulse current
C Capacitance
I
IPP
IBO
IH
IR
Table 4. Static parameters
IRM @ VRM
Type
max.
IR @ VR
max.
(1)
µA
V
µA
V
THBT15011D
5
135
50
150
THBT20011D
5
180
50
200
THBT27011D
5
240
50
270
1. IR measured at VR guarantee VBR min ≥ VR
2. Measured at 50 Hz (1 cycle) - See test circuit 1 (Figure 4).
3. See the reference test circuit 2 (Figure 5).
4. VR = 1 V bias, VRMS = 1 V, F = 1 MHz.
VBO @ IBO
max.
(2)
min.
V
V
mA
210
50
400
290
50
400
380
50
400
Characteristics
Value
170
Unit
°C/W
V
VRM VBR VBO
IH
min.
(3)
C
max.
(4)
mA
pF
150
80
150
80
150
80
3/10
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