TLP200M-TR データシートの表示（PDF） - STMicroelectronics
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TLP200M-TR Datasheet PDF : 14 Pages
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TLPxxM/G/G-1
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
Rth (j-a) Junction to ambient
TLPxxM
TLPxxG
TLPxxG-1
TLPxxM
TLPxxG
TLPxxG-1
Value
1.0
1.0
1.0
see table page 14
see table page 14
see table page 14
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING (Tamb = 25°C)
Type
IRM @ VRM
max.
IR @ VR
max.
µA
V
µA
V
TLP140M/G/G-1
5
120
50
140
TLP200M/G/G-1
5
180
50
200
TLP270M/G/G-1
5
230
50
270
Note : VR = 50 V bias, VRMS = 1V, F = 1 MHz.
C
typ.
note
pF
35
35
35
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (Tamb = 25°C)
Type
IRM @ VRM
max.
IR @ VR
max.
VBO @
IBO
max. max.
IH
min.
C @ VR
typ.
note 1
µA
V
µA
V
TLP140M/G/G-1 5
120
50
140
TLP200M/G/G-1 5
180
50
200
TLP270M/G/G-1 5
230
50
270
Note 1: IR measured at VR guarantees VBR min > VR.
Note 2: Measured at 50 Hz.
Note 3: See functional holding current test circuit.
Note 4: VR = 0V bias, VRMS = 1V, F = 1 MHz.
Note 5: VR = 50V bias, VRMS = 1V, F = 1 MHz (TIP or RING (-) / GND (+)).
note 2
V
200
290
400
mA
500
500
500
note 3
mA
150
150
150
note 4
pF
110
110
110
note 5
pF
40
40
40
4/14
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