BYD73D データシートの表示（PDF） - Philips Electronics

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BYD73D

Ultra fast low-loss controlled avalanche rectifiers

Philips Electronics 

Philips Semiconductors

Ultra fast low-loss

controlled avalanche rectifiers

Product specification

BYD73 series

SYMBOL

PARAMETER

Cd

diode capacitance

BYD73A to D

BYD73E to G

-d-d--I--tR--

maximum slope of reverse recovery

current

BYD73A to D

BYD73E to G

CONDITIONS

f = 1 MHz; VR = 0 V;

see Fig.15

when switched from

IF = 1 A to VR ≥ 30 V

and dIF/dt = −1 A/µs;

see Fig.17

MIN. TYP. MAX. UNIT

−

50

−

40

− pF

− pF

−

−

−

−

4 A/µs

5 A/µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE UNIT

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

lead length = 10 mm

note 1

60

K/W

120

K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.

For more information please refer to the “General Part of associated Handbook”.

1996 Sep 18

4

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