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HVU359 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
HVU359
Variable Capacitance Diode for VCXO
Hitachi -> Renesas Electronics
HVU359 Datasheet PDF : 5 Pages
1
2
3
4
5
HVU359
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
V
R
Tj
Tstg
Value
Unit
15
V
125
°
C
-55 to +125
°
C
Electrical Characteristics (Ta = 25
°
C)
Item
Reverse current
Capacitance
Capacitance ratio
Series resistance
ESD-Capability
*1
Symbol Min Typ Max
I
R1
— — 10
I
R2
— — 100
C
1
24.8 — 29.8
C
4
6.0 — 8.3
n
3.0 — —
r
s
— — 1.5
—
80 — —
Notes 1. Failure criterion ; IR
≥
20nA at VR =10 V
Unit
nA
pF
—
Ω
V
Test Condition
V
R
= 10V
V
R
= 10V, Ta = 60
°
C
V
R
= 1V, f = 1 MHz
V
R
= 4V, f = 1 MHz
C
1
/ C
4
V
R
= 4V, f = 100 MHz
C=200pF , Both forward and reverse direction
1 pulse.
2
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