G7N60C3D データシートの表示（PDF） - Fairchild Semiconductor

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G7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor 

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

BVCES

IC25

IC110

I(AVG)

Collector to Emitter Voltage

Collector Current Continuous At TC = 25oC

Collector Current Continuous At TC = 110oC

Average Diode Forward Current at 110oC

600

V

14

A

7

A

8

A

ICM

VGES

VGEM

SSOA

PD

TJ, TSTG

TL

tSC

Collector Current Pulsed (Note 1)

Gate to Emitter Voltage Continuous

Gate to Emitter Voltage Pulsed

Switching Safe Operating Area at TJ = 150oC (Figure 14)

Power Dissipation Total at TC = 25oC

Power Dissipation Derating TC > 25oC

Operating and Storage Junction Temperature Range

Maximum Lead Temperature for Soldering

Short Circuit Withstand Time (Note 2) at VGE = 15V

Short Circuit Withstand Time (Note 2) at VGE = 10V

56

±20

±30

40A at 480V

60

0.487

-40 to 150

260

1

8

A

V

V

W

W/oC

oC

oC

µs

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only

rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not

implied.

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125oC, RG = 50W.

Thermal Characteristics

RθJC

Thermal Resistance IGBT

Thermal Resistance Diode

2.1

oC/W

2.0

oC/W

Package Marking and Ordering Information

Part Number

HGTP7N60C3D

HGT1S7N60C3DS

HGT1S7N60C3D

Package

TO-220AB

TO-263AB

TO-262

Brand

G7N60C3D

G7N60C3D

G7N60C3D

NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.

2

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

Rev. B 1

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