ZXT10N15DE6TC データシートの表示（PDF） - Zetex => Diodes

部品番号

コンポーネント説明

メーカー

ZXT10N15DE6TC

SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Zetex => Diodes 

ZXT10N15DE6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO 15

70

V

IC=100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO 15

18

V

IC=10mA*

Emitter-Base Breakdown Voltage V(BR)EBO 5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

200

Ratio

300

200

150

Transition Frequency

fT

80

8.2

100

100

100

8 14

70 100

165 200

230 260

0.94 1.0

0.87 0.95

415

450

320

240

80

120

V

nA

nA

nA

mV

mV

mV

mV

V

V

MHz

IE=100␮A

VCB=10V

VEB=4V

VCES=10V

IC=0.1A, IB=10mA*

IC=1A, IB=10mA*

IC=3A, IB=50mA*

IC=4A, IB=50mA*

IC=4A, IB=50mA*

IC=4A, VCE=2V*

IC=10mA, VCE=2V*

IC=0.2A, VCE=2V*

IC=3A, VCE=2V*

IC=5A, VCE=2V*

IC=12A, VCE=2V*

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

30

40

pF

VCB=10V, f=1MHz

Turn-On Time

Turn-Off Time

t(on)

t(off)

120

ns

VCC=10V, IC=3A

IB1=IB2=50mA

160

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 1 - SEPTEMBER 2000

4

Share Link: