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UPD2723T-E3 データシートの表示(PDF) - NEC => Renesas Technology

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UPD2723T-E3
NEC
NEC => Renesas Technology NEC
UPD2723T-E3 Datasheet PDF : 12 Pages
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2723T
1.1 GHz AGC AMPLIFIER
FOR DBS TUNER AND MOBILE TELEPHONE
FEATURES
Wide frequency response – fu = 1.1 GHzTYP @ – 3 dB GPMAX.
Maximum power gain – GPMAX. = 13 dBTYP
Single supply voltage: 5 V, 15 mA TYP.
AGC Dynamic range: GCR = 38 dB TYP. @ f = 500 MHz
Packaged in 6 pins mini mold suitable for high-density surface mounting.
DESCRIPTION
The µPC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto
gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile
telephone and other applications.
The µPC2723T is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon
nitride passivation film and gold metallization wirings. These materials can protect the chips from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
ORDER INFORMATION
ORDER NUMBER
PACKAGE
µPC2723T–E3
6pin mini mold
SUPPLYING FORM
Embossed tape 8mm wide. 3kp/reel.
Pin1, 2, 3 face to perforation side of the tape.
MARKING
C1M
Remarks To order evaluation samples, please contact your local NEC sales office. (Order number: µPC2723T)
PIN CONNECTIONS
(Top View)
(Bottom View)
3
4
1. INPUT
4
3
2. GND
2
5
3. OUTPUT
5
2
4. VCC
5. VAGC
1
6
6. INPUT
6
1
Caution: Electro-static sensitive device
Document No. P10922EJ2V0DS00 (2nd edition)
(Previous No. ID-3258)
Date Published November 1995 P
Printed in Japan
©
1995

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