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RJH30 データシートの表示(PDF) - Renesas Electronics
部品番号
コンポーネント説明
メーカー
RJH30
Silicon N Channel IGBT High speed power switching
Renesas Electronics
RJH30 Datasheet PDF : 7 Pages
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RJH30H1DPP-M0
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current
100
Pulse Test
Ta = 25
°
C
80
60
40
20
0
0
1
2
3
4
5
Collector to Emitter Diode
Forward Voltage V
ECF
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25
°
C
3
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
P
DM
PW
T
1m
10 m
100 m
Pulse Width PW (s)
D=
PW
T
1
10
Preliminary
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
Rg
D.U.T.
V
CC
Vin = 15 V
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
10%
tf
toff
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
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