2015M データシートの表示（PDF） - GHz Technology

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2015M

15 Watts - 28 Volts, Class C Microwave 2000 MHz

GHz Technology 

2015 M

15 Watts - 28 Volts, Class C

Microwave 2000 MHz

GENERAL DESCRIPTION

The 2015M is a COMMON BASE transistor capable of providing 15 Watts

Class C, RF output power at 2000 MHz. It includes input prematching and

utilizes Gold metalization and diffused ballasting are used to provide high

reliability and supreme ruggedness. The transistor uses a fully hermetic High

Temperature Solder Sealed package.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25oC

50 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage

BVebo Emitter to Base Voltage

Ic

Collector Current

50 Volts

3.5 Volts

3.0 A

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200oC

+ 200oC

CASE OUTLINE

55NV, Style 1

ELECTRICAL CHARACTERISTICS @ 25 OC

SYMBOL CHARACTERISTICS

TEST CONDITIONS

Pout

Pin

Pg

ηc

VSWR1

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 2 GHz

Vcb = 28 Volts

Po = 15 Watts

As Above

F = 2 GHz, Po = 15 W

MIN

15.0

6.0

TYP MAX UNITS

Watt

3.75 Watt

7.0

dB

40

%

10:1

BVces

BVcbo

BVebo

Icbo

hFE

Cob

θjc

Collector to Emitter Breakdown

Collector to Base Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Output Capacitance

Thermal Resistance

Ic = 60 mA

Ic = 6 mA

Ie = 6 mA

Vcb = 28 Volts

Vce = 5 V, Ic = 600 mA

F =1 MHz, Vcb = 28 V

Issue August 1996

50

Volts

45

Volts

3.5

Volts

3

mA

15

120

22

pF

3.5

oC/W

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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