BU105 データシートの表示（PDF） - Inchange Semiconductor

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BU105

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU105

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

750

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 100mA; IC= 0

5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2.5A; IB= 1.5A

ICES

Collector Cutoff Current

VCE= 1500V; VBE= 0

5.0

V

1.5

V

1.0 mA

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V

tf

Fall Time

IC= 2A; IB1= 1.5A; LB= 12μH

65

pF

7.5

MHz

0.5

μs

isc Website：www.iscsemi.cn

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