2SC5440 データシートの表示（PDF） - Panasonic Corporation
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2SC5440 Datasheet PDF : 3 Pages
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Power Transistors
2SC5440
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
1 500
V
Collector to emitter voltage
VCES
1 500
V
VCEO
600
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
25
A
Collector current
IC
15
A
Base current
IB
7.5
A
Collector power TC = 25°C
PC
60
W
dissipation
Ta = 25°C
3.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
5˚
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
Internal Connection
1 : Base
2 : Collector
3 : Emitter
TOP-3E Package
C
B
E
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
ICBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 7.5 A
5
IC = 7.5 A, IB = 1.88 A
IC = 7.5 A, IB = 1.88 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 7.5 A, IB1 = 1.88 A, IB2 = −3.76 A
Typ Max
50
1
50
9
3
1.5
3
2.7
0.2
Unit
µA
mA
µA
V
V
MHz
µs
µs
1
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