IRLR7821 データシートの表示（PDF） - Unspecified

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IRLR7821

HEXFET Power MOSFET

Unspecified 

IRLR/U7821

10000

1000

100

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

10

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

6

ID= 12A

5

4

VDS= 24V

VDS= 16V

3

2

1

0

0

2

4

6

8 10 12

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

100

TJ= 175 ° C

10

TJ= 25 ° C

1

0.1

0.0

V GS = 0 V

0.5

1.0

1.5

2.0

V SD,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100

100µsec

10

1msec

1

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

1

10

10msec

100

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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