ZXTN25040DFH データシートの表示（PDF） - Unspecified

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ZXTN25040DFH

40V, SOT23, NPN medium power transistor

Unspecified 

ZXTN25040DFH

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Collector-base breakdown

voltage

BVCBO

Collector-emitter breakdown BVCEX

voltage (forward blocking)

Collector-emitter breakdown BVCEO

voltage (base open)

Emitter-base breakdown

voltage

BVEBO

Emitter-collector breakdown BVECX

voltage (reverse blocking)

Emitter-collector breakdown BVECO

voltage (base open)

Min.

130

130

40

7

6

6

Typ. Max. Unit Conditions

170

V IC = 100␮A

170

V IC = 100␮A; RBE < 1k⍀ or

-1V < VBE < 0.25V

63

V IC = 10mA (*)

8.3

V IE = 100␮A

7.4

V IE = 100␮A, RBC < 1k⍀ or

0.25V > VBC > -0.25V

7.4

V IE = 100␮A,

Collector-base cut-off current ICBO

Collector-emitter cut-off

ICEX

current

Emitter-base cut-off current

Collector-emitter saturation

voltage

IEBO

VCE(sat)

Base-emitter saturation

voltage

VBE(sat)

<1

50

nA VCB = 100V

20

␮A VCB = 100V, Tamb= 100°C

-

100 nA VCE = 100V; RBE < 1k⍀

or

-1V < VBE < 0.25V

<1

50

nA VEB = 5.6V

45

55 mV IC = 1A, IB = 100mA(*)

120 210 mV IC = 1A, IB = 10mA(*)

135 210 mV IC = 2A, IB = 40mA(*)

140 190 mV IC = 4A, IB = 400mA(*)

960 1050 mV IC = 4A, IB = 400mA(*)

Base-emitter turn-on voltage VBE(on)

Static forward current

hFE

transfer ratio

Transition frequency

fT

840 950 mV IC = 4A, VCE = 2V(*)

300 450 900

IC = 10mA, VCE = 2V(*)

300 450

IC = 1A, VCE = 2V(*)

30 60

IC = 4A, VCE = 2V(*)

10

IC = 10A, VCE = 2V(*)

190

MHz IC = 50mA, VCE = 10V

f = 100MHz

Output capacitance

Delay time

Rise time

Storage time

Fall time

COBO

td

tr

ts

tf

11.7 20

64

108

428

130

pF VCB = 10V, f = 1MHz(*)

ns VCC = 10V,

ns IC = 1A,

ns IB1 = IB2= 10mA

ns

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

Issue 1 - June 2006

4

© Zetex Semiconductors plc 2006

www.zetex.com

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