2SD1397 データシートの表示（PDF） - Micro Commercial Components
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2SD1397 Datasheet PDF : 1 Pages
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MCC
omponents
21201 Itasca Street Chatsworth
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Features
• With TO-3PN package
• Horizontal deflection output driver
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
800
V
1500
V
7.0
V
3.5
A
80
W
-55 to +150
OC
-55 to +150
OC
2SD1397
NPN Silicon
Power Transistors
TO-3PN
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min
Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
800
(IC=100mAdc, IB=0)
ICBO
Collector-Base Cutoff Current
---
(VCB=800Vdc,IE=0)
IEBO
Emitter-Base Cutoff Current
---
(VEB=7.0Vdc, IC=0)
ON CHARACTERISTICS
---
Vdc
10
uAdc
1.0
mAdc
hFE
Forward Current Transfer ratio
8.0
---
---
(IC=0.5Adc, VCE=5.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage
---
8.0 Vdc
(IC=2.5Adc, IB=0.8Adc)
V BE(sat)
Base-Emitter Saturation Voltage
---
1.5 Vdc
(IC=2.5Adc,IB=0.8Adc)
1.Base
2.Collector
3.Emitter
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.181
.197
4.60
5.00
B
.074
.083
1.90
2.10
C
.022
.033
0.55
0.85
D
.055
1.40
E
.211
.219
5.35
5.55
F
.037
.049
0.95
1.25
G
.118
3.00
H
.079
2.00
I
.122
.130
3.10
3.30
J
.189
.205
4.80
5.20
K
.071
1.80
L
.598
.630
15.20
16.00
M
.378
9.6
N
.079
2.0
P
.157
4.0
Q
.772
.795
19.6
20.2
R
.787
20.0
S
.157
4.0
T
.211
.219
5.35
5.55
www.mccsemi.com
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