9435 データシートの表示（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

部品番号

コンポーネント説明

メーカー

9435

P-Channel Enhancement Mode Power MOSFET

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Mosfets

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The 9435 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

9435

GENERAL FEATURES

● VDS = -30V,ID = -5.1A

RDS(ON) < 105mΩ @ VGS=-4.5V

RDS(ON) < 55mΩ @ VGS=-10V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

SOP-8 top view

D

Application

●PWM applications

●Load switch

●Power management

G

S

pin Assignment Schematic diagram

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Drain Current-Continuous

ID

Drain Current-Pulsed (Note 1)

IDM

Maximum Power Dissipation

PD

Operating Junction and Storage Temperature Range

TJ,TSTG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

Limit

-30

±20

-5.1

-20

2

-55 To 150

Unit

V

V

A

A

W

℃

50

℃/W

Min Typ Max Unit

-30 -33

-

V

GUANGDONG HOTTECH INDUSTRIAL CO., LTD.

Page:P5 -P1

Share Link: