HAT2167H-EL-E データシートの表示（PDF） - Renesas Electronics

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HAT2167H-EL-E

Silicon N Channel Power MOS FET Power Switching

Renesas Electronics 

HAT2167H

Silicon N Channel Power MOS FET

Power Switching

Features

• High speed switching

• Capable of 4.5 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

Outline

RENESAS Package code: PTZZ0005DA-A)

(Package name: LFPAK )

5

1 234

5

D

4

G

SSS

123

REJ03G0039-0500

Rev.5.00

Sep 20, 2005

1, 2, 3 Source

4

Gate

5

Drain

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel to Case Thermal Resistance

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

Symbol

VDSS

VGSS

ID

ID(pulse)Note1

IDR

IAP Note 2

EAR Note 2

Pch Note3

θch-C

Tch

Tstg

Ratings

30

±20

40

160

40

20

40

20

6.25

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C/W

°C

°C

Rev.5.00 Sep 20, 2005 page 1 of 7

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