HAT2167H-EL-E データシートの表示（PDF） - Renesas Electronics

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HAT2167H-EL-E

Silicon N Channel Power MOS FET Power Switching

Renesas Electronics 

HAT2167H

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 30

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

resistance

RDS(on)

—

RDS(on)

—

Forward transfer admittance

|yfs|

42

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Gate resistance

Rg

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body–drain diode forward voltage

VDF

—

Body–drain diode reverse recovery

trr

—

time

Notes: 4. Pulse test

Typ

—

—

—

—

—

4.2

6.1

70

2700

620

200

0.5

17

8

3.7

11

30

45

6

0.85

30

Max

—

—

±10

1

2.5

5.5

9.3

—

—

—

—

—

—

—

—

—

—

—

—

1.10

—

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 30 V, VGS = 0

VDS = 10 V, I D = 1 mA

ID = 20 A, VGS = 10 V Note4

ID = 20 A, VGS = 4.5 V Note4

ID = 20 A, VDS = 10 V Note4

VDS = 10 V, VGS = 0,

f = 1 MHz

VDD = 10 V, VGS = 4.5 V,

ID = 40 A

VGS = 10 V, ID = 20 A,

VDD ≅ 10 V, RL = 0.5 Ω,

Rg = 4.7 Ω

IF = 40 A, VGS = 0 Note4

IF = 40 A, VGS = 0,

diF/ dt = 100 A/ µs

Rev.5.00 Sep 20, 2005 page 2 of 7

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