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2SK3878(F) データシートの表示(PDF) - Toshiba
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コンポーネント説明
メーカー
2SK3878(F)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Toshiba
2SK3878(F) Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
5
COMMON SOURCE
VGS
=
10 V
PULSE TEST
4
3
ID
=
9 A
2
4.5
2.3
1
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3878
I
DR
−
V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
1
10
5
1
3
VGS
=
0 V
0.1
0
−
0.4
−
0.8
−
1.2
−
1.6
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
10000
1000
C
−
V
DS
Ciss
Coss
100
Crss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
−
Tc
5
4
3
2
1
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
−
Tc
200
160
120
80
40
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
VDS
400
COMMON SOURCE
20
ID
=
9 A
Tc
=
25°C
PULSE TEST
16
300
100
12
200
VDD
=
400 V
200
8
VGS
100
4
0
0
0
20
40
60
80
100
TOTAL GATE CHARGE Q
g
(nC)
4
2010-05-06
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