Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SK3563 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3563
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3563 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
COMMON SOURCE
Tc
=
25°C
10,15
PULSE TEST
4
6
3
5.5
52.5
5
2
4.75
4.5
1
VGS
=
4 V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE V
DS
(V)
2SK3563
I
D
– V
DS
10
10,15
6
COMMON SOURCE
8
Tc
=
25°C
PULSE TEST
6
5.5
4
5
2
4.5
VGS
=
4 V
0
0
10
20
30
40
40
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
8
PULSE TEST
6
4
Tc
= −
55°C
2
100
25
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
16
PULSE TEST
12
ID
=
5 A
8
2.5
4
1.2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
Tc
= −
55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
10
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
VGS
=
10 V
、
15V
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2009-09-29
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]