TTK101MFV データシートの表示（PDF） - Unspecified

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TTK101MFV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

Unspecified 

TTK101MFV

For ECM

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

TTK101MFV

Application for compact ECM

Thin package: 0.5mm

Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz

Low noise: VN = 15 mV (typ.)

@VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve Filter

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Symbol

Rating

Unit

Gate-drain voltage

Gate current

Drain power dissipation

Junction temperature

Storage temperature range

VGDO

-20

V

IG

10

mA

PD (Note 1)

150

mW

Tj

125

°C

Tstg

−55 to 125

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)

Unit: mm

1.2±0.05

0.8±0.05

1

3

2

VESM

1.Drain

2.Source

3.Gate

JEDEC

-

JEITA

-

TOSHIBA

2-1L1C

Weight: 1.5mg (typ.)

0.5mm

0.45mm

0.45mm

0.4mm

Marking

I

Type Name

IDSS Classification Symbol

1: A-Rank

2: B-Rank

IDSS Classification

A-Rank 140 to 240 μA

B-Rank 210 to 340 μA

1

Equivalent Circuit

D

G

S

Start of commercial production

2009-03

2014-03-01

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