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TK13A60D データシートの表示(PDF) - Toshiba
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コンポーネント説明
メーカー
TK13A60D
Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor
Toshiba
TK13A60D Datasheet PDF : 6 Pages
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TK13A60D
r
th
– t
w
10
1
Duty = 0.5
0.1
0.01
0.001
10
μ
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
2.5°C/W
100
μ
1m
10 m
100 m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (pulsed)
*
ID max (continuous)
*
10
100
μ
s
*
1 ms
*
1
DC operation
Tc
=
25°C
0.1
*: SINGLE NONREPETITIVE PULSE
0.01
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
0.001
1
TEMPERATURE.
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
600
500
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
5.3 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2008-09-16
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