MCZ33897TEFR2(2011) データシートの表示（PDF） - Freescale Semiconductor

部品番号

コンポーネント説明

メーカー

MCZ33897TEFR2
(Rev.:2011)

Single Wire CAN Transceiver

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 5. Dynamic Electrical Characteristics (continued)

Characteristics noted under conditions of -40 °C ≤ TA ≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless

otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.

Characteristic

Symbol

Min

Typ

Max

Unit

BUS (CONTINUED)

High Voltage Rising Output Delay

200 Ω ≤ RL ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs

Measured from TXD=VIL to VBUS as follows:

Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)

Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)

Max Time to VBUSMOD = 9.4 V, 12.0 V ≤ VBATT ≤ 26.5 V (12)

High Voltage Falling Output Delay

200 Ω ≤ RL ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs,

12.0 V ≤ VBATT ≤ 26.5 V

Measured from TXD=VIH to VBUS as follows:

Max Time to VBUSMOD = 1.0 V (12)

Min Time to VBUSMOD = 3.7 V (12)

t DLYHVRO

μs

2.0

–

6.3

2.0

–

6.3

2.0

–

18

t DLYHVFO

μs

1.8

–

14

1.8

–

14

RECEIVER RXD

Receive Delay Time (5.0 V ≤ VBATT ≤ 26.5 V)

Awake

t RDLY

μs

0.2

–

1.0

Receive Delay Time (BUS Rising to RXD Falling, 5.0 V ≤ VBATT ≤ 26.5 V)

t RDLYSL

μs

Sleep

10

–

70

CNTL

CNTL Falling Delay Time (5.0 V ≤ VBATT ≤ 26.5 V)

t CNTLFDLY

300

Notes

12. VBUSMOD is the voltage at the BUSMOD node in Figure 6, page 13.

–

1000

ms

33897

10

Analog Integrated Circuit Device Data

Freescale Semiconductor

Share Link: