MDP13N50TH データシートの表示（PDF） - MagnaChip Semiconductor

部品番号

コンポーネント説明

メーカー

MDP13N50TH

N-Channel MOSFET 500V, 13.0A, 0.5Ω

MagnaChip Semiconductor 

MDP13N50

N-Channel MOSFET 500V, 13.0A, 0.5Ω

General Description

The MDP13N50 uses advanced Magnachip’s

MOSFET Technology, which provides low on-

state resistance, high switching performance

and excellent quality.

MDP13N50 is suitable device for SMPS, HID

and general purpose applications.

Features

VDS = 500V

ID = 13.0A @VGS = 10V

RDS(ON) < 0.5Ω @VGS = 10V

Applications

Power Supply

HID

Lighting

Absolute Maximum Ratings (Ta = 25oC)

Characteristics

Drain-Source Voltage

Drain-Source Voltage @ Tjmax

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current(1)

Power Dissipation

Peak Diode Recovery dv/dt(3)

Single Pulse Avalanche Energy(4)

Junction and Storage Temperature Range

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient(1)

Thermal Resistance, Junction-to-Case(1)

Nov 2009. Version 2.0

TC=25oC

TC=100oC

TC=25oC

Derate above 25 oC

Symbol

VDSS

VDSS @ Tjmax

VGSS

ID

IDM

PD

Dv/dt

EAS

TJ, Tstg

Rating

500

550

±30

13

8.2

52

187

1.49

4.5

580

-55~150

Unit

V

V

V

A

A

A

W

W/ oC

V/ns

mJ

oC

Symbol

RθJA

RθJC

Rating

62.5

0.67

Unit

oC/W

1

MagnaChip Semiconductor Ltd.

Share Link: