MDP13N50 データシートの表示（PDF） - MagnaChip Semiconductor
部品番号
コンポーネント説明
メーカー
MDP13N50 Datasheet PDF : 6 Pages
| |||
Ordering Information
Part Number
MDP13N50TH
Temp. Range
-55~150oC
Package
TO-220
Packing
Tube
ROHS status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 6.5A
VDS = 40V, ID = 6.5A
VDS = 400V, ID = 13A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 13A,
RG = 25Ω(3)
IS = 13A, VGS = 0V
IF = 13A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=6.2mH, IAS=13.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
500
-
3.0
-
-
V
5.0
-
-
1
µA
-
-
100 nA
0.39 0.5
Ω
-
13
-
S
-
33
-
10.4
nC
-
13
-
1390
-
6.3
pF
-
173
-
30.2
-
52.8
ns
-
60.8
-
33.8
-
13
-
A
-
1.4
V
-
325
ns
-
2.9
µC
Nov 2009. Version 2.0
2
MagnaChip Semiconductor Ltd.
Share Link: 