MDP13N50 データシートの表示（PDF） - MagnaChip Semiconductor

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MDP13N50

N-Channel MOSFET 500V, 13.0A, 0.5Ω

MagnaChip Semiconductor 

30

Vgs=5.5V

25

=6.0V

=6.5V

=7.0V

=8.0V

20

=10.0V

15

10

5

Notes

1. 250㎲ Pulse Test

2. TC=25℃

5

10

15

20

VDS,Drain-Source Voltage [V]

Fig.1 On-Region Characteristics

1.8

※ Notes :

1.6

1. VGS = 10 V

2. ID = 5 A

1.4

1.2

1.0

VGS=10V

V =4.5V

GS

0.8

0.6

-50

-25

0

25

50

75

100

125

150

TJ, Junction Temperature [oC]

Fig.3 On-Resistance Variation with

Temperature

0.9

0.8

0.7

0.6

VGS=10.0V

VGS=20V

0.5

0.4

5

10

15

20

25

30

35

ID,Drain Current [A]

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.2

※ Notes :

1. VGS = 0 V

2. ID = 250㎂

1.1

1.0

0.9

0.8

-50

0

50

100

150

200

TJ, Junction Temperature [oC]

Fig.4 Breakdown Voltage Variation vs.

Temperature

* Notes ;

1. VDS=30V

10

150℃

25℃

-55℃

1

4

5

6

7

8

VGS [V]

Fig.5 Transfer Characteristics

Nov 2009. Version 2.0

3

100

※ Notes :

1. VGS = 0 V

2. ID = 250㎂

10

150℃

25℃

1

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-Drain Voltage [V]

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

MagnaChip Semiconductor Ltd.

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