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BAW56M3T5G データシートの表示(PDF) - ON Semiconductor

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BAW56M3T5G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BAW56M3T5G Datasheet PDF : 4 Pages
1 2 3 4
BAW56M3T5G
Dual Switching Diode
Common Anode
The BAW56M3T5G device is a spinoff of our popular SOT23
threeleaded device. It is designed for switching applications and is
housed in the SOT723 surface mount package. This device is ideal
for lowpower surface mount applications where board space is at a
premium.
Features
Reduces Board Space
This is a HalideFree Device
This is a PbFree Device
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
75
IF
200
IFM(surge) 500
Vdc
mAdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation
FR5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
mW
265
mW/°C
2.1
Thermal Resistance,
JunctiontoAmbient
RqJA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
640
mW
5.1 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
195 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
70 V
DUAL COMMON ANODE
SWITCHING DIODE
ANODE
3
CATHODE
1
2
CATHODE
MARKING
DIAGRAM
3
SOT723
CASE 631AA
AN M
2
STYLE 4
1
1
AN = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BAW56M3T5G
SOT723 8000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 Rev. 0
Publication Order Number:
BAW56M3/D

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