BAW56M3T5G データシートの表示（PDF） - ON Semiconductor

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BAW56M3T5G

Dual Switching Diode Common Anode

ON Semiconductor 

BAW56M3T5G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR)

70

−

V

Reverse Voltage Leakage Current

Diode Capacitance

IR

(VR = 25 V, TJ = 150°C)

(VR = 70 V)

(VR = 70 V, TJ = 150°C)

CD

(VR = 0 V, f = 1.0 MHz)

mA

−

30

−

2.5

−

50

−

2.0

pF

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

VF

mV

−

715

−

855

−

1000

−

1250

Reverse Recovery Time

(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)

RL = 100 W

trr

−

6.0

ns

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

0.1 mF

tr

tp

t

10%

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

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