K9F2G08U0B データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9F2G08U0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

Preliminary

FLASH MEMORY

Product Introduction

The K9F2G08X0B is a 2,112Mbit(2,214,592,512 bit) memory organized as 131,072 rows(pages) by 2,112x8 columns. Spare 64x8

columns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommo-

dating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made

up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists

of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program

and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array con-

sists of 2,048 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F2G08X0B.

The K9F2G08X0B has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades

to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by

bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch

Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For

example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block

erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 264M byte physical space

requires 29 addresses, thereby requiring five cycles for addressing : 2 cycles of column address, 3 cycles of row address, in that

order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase oper-

ation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the

command register. Table 1 defines the specific commands of the K9F2G08X0B.

Table 1. Command Sets

Function

1st Cycle

2nd Cycle

Read

00h

30h

Read for Copy Back

00h

35h

Read ID

90h

-

Reset

FFh

-

Page Program

80h

10h

Two-Plane Page Program(1)

80h---11h

81h---10h

Copy-Back Program

85h

10h

Two-Plane Copy-Back Program(1)

85h---11h

81h---10h

Block Erase

60h

D0h

Two-Plane Block Erase

60h---60h

D0h

Random Data Input(2)

85h

-

Random Data Output(2)

05h

E0h

Read Status

70h

-

Read Status 2

F1h

-

NOTE : 1. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.

2. Random Data Input/Output can be executed in a page.

Acceptable Command during Busy

O

O

O

Caution : Any undefined command inputs are prohibited except for above command set of Table 1.

Samsung Confidential

7

Share Link: